LHF16KA7 查看數據表（PDF） - Sharp Electronics

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LHF16KA7

Flash Memory 16M (2MB × 8/1MB × 16)

Sharp Electronics 

SHAl?P

LHFlGKA7

2

-

LH28F160S3HT-Ll OA

1 GM-BIT (2MBx8/1 MBxl6)

Smart 3 Flash MEMORY

n Smart 3 Technology

- 2.7V or 3.3V Vcc

- 2.7V, 3.3V or SV Vpp

I Common Flash Interface (CFI)

- Universal & Upgradable Interface

I Scalable Command Set (SCS)

n High Speed Write Performance

- 32 Bytes x 2 plane Page Buffer

- 2.7 @Byte Write Transfer Rate

n High Speed Read Performance

- 1OOns(3.3V*O.3V), 120ns(2.7\1-3.6V)

I Operating Temperature

- -40°C to +85X

n Enhanced Automated Suspend Options

- Write Suspend to Read

- Block Erase Suspend to Write

- Block Erase Suspend to Read

n High-Density Symmetrically-Blocked

Architecture

- Thirty-two 64K-byte Erasable Blocks

I SRAM-Compatible Write Interface

I User-Configurable x8 or x16 Operation

n Enhanced Data Protection Features

- Absolute Protection with VpP=GND

- Flexible Block Locking

- Erase/Write Lockout during Power

Transitions

n Extended Cycling Capability

- 100,000 Block Erase Cycles

- 3.2 Million Block Erase Cycles/Chip

n Low Power Management

- Deep Power-Down Mode

- Automatic Power Savings Mode

Decreases ICC in Static Mode

n Automated Write and Erase

- Command User Interface

- Status Register

n Industry-Standard Packaging

- 56-Lead TSOP

n ETOgTM* V Nonvolatile Flash

Technology

n CMOS Process

(P-type silicon substrate)

n Not designed or rated as radiation

hardened

SHARP’s LH28F160S3HT-LlOA Flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile,

*cad/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage

and extended cycling provide for highly flexible component suitable for resident flash arrays, SlMMs and memory

:ards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For

secure code storage applications, such as networking, where code is either directly executed out of flash or

downloaded to DRAM, the LH28F160S3HT-LlOA offers three levels of protection: absolute protection with V,, at

?ND, selective hardware block locking, or flexible software block locking. These alternatives give designers

Jltimate control of their code security needs.

The LH28F160S3HT-LlOA is conformed to the flash Scalable Command Set (SCS) and the Common Flash

nterface (CFI) specification which enable universal and upgradable interface, enable the highest system/device

data transfer rates and minimize device and system-level implementation costs.

The LH28F160S3HT-LlOA is manufactured on SHARP’s 0.35um ETOX TM* V process technology. It come in

ndustry-standard package: the 56-Lead TSOP ideal for board constrained applications.

‘ETOX is a trademark of Intel Corporation.

Rev. 1.9

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