BAS29 查看數據表（PDF） - NXP Semiconductors.
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BAS29 Datasheet PDF : 9 Pages
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NXP Semiconductors
General purpose controlled avalanche
(double) diodes
Product data sheet
BAS29; BAS31; BAS35
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 90 V
• Repetitive peak reverse voltage: max. 110 V
• Repetitive peak forward current: max. 600 mA
• Repetitive peak reverse current: max. 600 mA.
PINNING
DESCRIPTION
PIN
BAS29
BAS31
BAS35
1 anode
anode
cathode (k1)
2 not connected cathode
cathode (k2)
3 cathode
common
connection
common
anode
APPLICATIONS
handbook, halfpa2ge
1
• General purpose switching in e.g. surface mounted
circuits.
2
1
DESCRIPTION
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
MARKING
TYPE NUMBER
BAS29
BAS31
BAS35
MARKING CODE(1)
L20 or ∗A8
L21 or ∗V1
L22 or ∗V2
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
3
a. Simplified outline.
3
c. BAS31 diode.
2
n.c.
1
2
1
3
b. BAS29 diode.
3
d. BAS35 diode.
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
2003 Mar 20
2
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