BAS29 查看數據表（PDF） - NXP Semiconductors.
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BAS29 Datasheet PDF : 9 Pages
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NXP Semiconductors
General purpose controlled avalanche
(double) diodes
GRAPHICAL DATA
300
handbook, halfpage
IF
(mA)
(1)
200
MBG440
600
handbook, halfpage
IF
(mA)
400
Product data sheet
BAS29; BAS31; BAS35
MBH280
(1) (2) (3)
100
200
(2)
0
0
100
Tamb (oC)
200
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
102
handbook, full pagewidth
IFSM
(A)
10
MBH327
1
10−1
1
10
102
103
tp (µs)
104
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5
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