BAS29 查看數據表（PDF） - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
BAS29 Datasheet PDF : 9 Pages
| |||
NXP Semiconductors
General purpose controlled avalanche
(double) diodes
Product data sheet
BAS29; BAS31; BAS35
102
handbook, halfpage
IR
(µA)
10
1
(1)
(2)
MBH282
10−1
10−2
0
100
Tj (oC)
200
(1) VR = 90 V; maximum values.
(2) VR = 90 V; typical values.
Fig.5 Reverse current as a function of junction
temperature.
40
handbook, halfpage
Cd
(pF)
30
20
10
0
0
10
MGD003
20
30
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t rr
t
(1)
output signal
(1) IR = 3 mA.
2003 Mar 20
Fig.7 Reverse recovery voltage test circuit and waveforms.
6
Share Link: 