BD902 查看數據表（PDF） - Comset Semiconductors
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BD902 Datasheet PDF : 4 Pages
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SEMICONDUCTORS
BD896 – BD898 – BD900 – BD902
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VBE(on)
Base-Emitter Voltage
(*)
IC= -3 A, VCE= -3 V
hFE
DC Current Gain (*)
VCE= -3.0 V
IC= -3 A
VECF
C-E Diode Forward
Voltage
IE= -8 A
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
Min Typ Max Unit
-
- -2.5 V
750 -
-
-
-
- -3.5 V
SWITCHING TIMES
Symbol
Ratings
ton
turn-on time
toff
turn-off time
Test Condition(s)
IC= -3 A, VBE(off) = 3.5 V
IBon = -IBoff = -12 mA, RL = 10 Ω
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Min Typ Max Unit
-
1
-
µs
-
5
-
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
RthJ-A
Thermal Resistance Junction To Case
Thermal Resistance Junction To Free Air
Value
1.79
62.5
Unit
°C/W
°C/W
25/09/2012
COMSET SEMICONDUCTORS
3|4
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