MMDT3946 查看數據表（PDF） - Galaxy Semi-Conductor
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MMDT3946 Datasheet PDF : 5 Pages
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Production specification
Small Surface Mount Transistor
MMDT3946
ELECTRICAL CHARACTERISTICS NPN 3904 Section @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V(BR)CBO
Collector-base breakdown voltage IC=10μA,IE=0
60
V
V(BR)CEO
Collector-emitter breakdown voltage IC=1mA,IB=0
40
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA,IC=0
5
V
ICEX
collector cut-off current
VCE= 30V VEB(OFF)= 3.0V
-
50 nA
IBL
hFE
VCE(sat)
Base cut-off current
DC current gain
collector-emitter saturation voltage
VCE= 30V VEB(OFF)= 3.0V
VCE=1V,IC= 0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB =1.0mA
IC=50mA,IB =5mA
-
50 nA
40
-
70
-
100 300
60
-
30
-
- 200 mV
- 300 mV
VBE(sat)
base-emitter saturation voltage
Cobo
Output capacitance
Cobi
Input capacitance
IC=10mA,IB =1mA
IC=50mA, IB =5mA
IE =0, VCB =5V; f =1MHz
IC=0, VEB =0.5V; f =1MHz
650 850 mV
- 950 mV
-
4 pF
-
8 pF
fT
transition frequency
NF
noise figure
td
delay time
tr
rise time
IC=20mA,VCE=20V,f=100MHz 300
IC=0.1mA,VCE =5V,RS=1kΩ,
-
f = 1kHz
-
VCC=3V,VBE(off)=-0.5V
IC=10mA,IB1=IB2=1mA
-
- MHz
5 dB
35 ns
35 ns
ts
storage time
tf
fall time
VCC=3V,IC=10mA
IB1=IB2=1mA
- 200 ns
-
50 ns
G004
Rev.A
www.gmicroelec.com
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