MMBT4403LT1G 查看數據表（PDF） - ON Semiconductor
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MMBT4403LT1G Datasheet PDF : 7 Pages
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10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
MMBT4403L, SMMBT4403L
TRANSIENT CHARACTERISTICS
25°C
100°C
100
VCC = 30 V
70
IC/IB = 10
50
30
20
IC/IB = 10
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
QT
QA
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 3. Charge Data
10
7.0
5.0
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. Turn−On Time
100
70
50
30
20
10
7.0
5.0
10
10
8
VCC = 30 V
IC/IB = 10
200
IC/IB = 10
100
70
IC/IB = 20
50
IB1 = IB2
ts′ = ts - 1/8 tf
30
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 5. Rise Time
20
10
20 30 50 70 100
200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
f = 1 kHz
8
6
IC = 1.0 mA, RS = 430 W
IC = 500 mA, RS = 560 W
IC = 50 mA, RS = 2.7 kW
4
IC = 100 mA, RS = 1.6 kW
6
IC = 50 mA
100 mA
4
500 mA
1.0 mA
2
RS = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
0
50 100 200
500 1 k 2 k
5 k 10 k 20 k 50 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
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