1F3 查看數據表（PDF） - KEXIN Industrial
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1F3 Datasheet PDF : 2 Pages
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DIP Type
Fast Recovery Diodes
1F1 ~ 1F7
■ Features
● High Current Capability
● Low Leakage
● Fast Switching for High Efficiency
● 1.0 Ampere operation at Ta =55 o C with no thermal runaway
R-1
20.0
3.2 ± 0.3
20.0
Diodes
Unit:mm
Cathode Mark
2.30 ~ 2.60
0.50 ~ 0.60
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol 1F1 1F2 1F3 1F4 1F5 1F6 1F7 Unit
Repetitive Peak Reverse Voltage
RMS Voltage
DC Blocking Voltage
VRRM 50 100 200 400 600 800 1000
VRMS 35 70 140 280 420 560 700
V
VDC
50 100 200 400 600 800 1000
Averaged Forward Current TC=55℃
IFAV
1
A
Peak Forward Surge Current @ 8.3ms half sine IFSM
30
Thermal Resistance Junction to Ambient
RθJA
67
℃/W
Junction Temperature
Storage Temperature
Tj
150
℃
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Forward voltage
Reverse voltage leakage current
Typical Junction Capacitance
Reverse Recovery Time
1F1-1F4
1F5
1F6-1F7
Symbol
Test Conditions
VF IFM = 1.0A,Tc = 25°C
TC = 25°C
IR
TC = 100°C
CJ VR=4V, f=1MHz
IF=0.5A
trr
IF=1A
IF=0.25A
Min Typ Max Unit
1.3 V
5
uA
500
12 pF
150
250 ns
500
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