SD103AW 查看數據表（PDF） - Yea Shin Technology Co., Ltd

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SD103AW

SCHOTTKY DIODES

Yea Shin Technology Co., Ltd 

DATA SHEET

SEMICONDUCTOR

SCHOTTKY DIODES

FEATURES

z Low Forward Voltage Drop

z Guard Ring Construction for Transient Protection

z Negligible Reverse Recovery Time

z Low Reverse Capacitance

SD103AW/BW/CW

H

SOD123 Unit:inch(mm)

MARKING: SD103AW: S4

SD103BW: S5

SD103CW: S6

Symbol

A

A1

A2

b

c

D

E

E1

L

L1

θ

Dimensions In Millimeters

Min

1.050

Max

1.250

0.000

0.100

1.050

1.150

0.450

0.650

0.080

0.150

1.500

1.700

2.600

2.800

3.550

3.850

0.500 REF

0.250

0.450

0°

8°

Dimensions In Inches

Min

0.041

Max

0.049

0.000

0.004

0.041

0.045

0.018

0.026

0.003

0.006

0.059

0.067

0.102

0.110

0.140

0.152

0.020 REF

0.010

0.018

0°

8°

Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Parameter

Symbol

SD103AW

SD103BW

Peak Repetitive Peak reverse voltage

VRRM

Working Peak

VRWM

40

30

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

28

21

Forward Continuous Current

IFM

350

Repetitive Peak Forward Current @t≤1.0s

IFRM

1.5

Power Dissipation

Pd

400

Thermal Resistance Junction to Ambient

Storage temperature

RθJA

TSTG

300

-55~+150

Electrical Ratings @TA=25℃

Parameter

Symb

Min.

ol

Typ.

Max. Unit

Reverse Breakdown Voltage SD103AW

40

SD103BW V (BR)R 30

V

SD103CW

20

Forward voltage

Reverse current

VF

SD103AW

SD103BW IRM

SD103CW

0.37

V

0.60

5.0

µA

Capacitance between terminals

CT

50

pF

Reverse Recovery Time

trr

10

ns

http://www.yeashin.com

1

SD103CW

20

14

Unit

V

V

mA

A

mW

℃/W

℃

Conditions

IR=10µA

IR=10µA

IR=10µA

IF=20mA

IF=200mA

VR=30V

VR=20V

VR=10V

VR=0V,f=1.0MHz

IF=IR=200mA

Irr=0.1XIR,RL=100Ω

REV.02 20120305

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