BAT54HT1G(2005) 查看數據表（PDF） - ON Semiconductor
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BAT54HT1G Datasheet PDF : 4 Pages
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BAT54HT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
• Device Marking: JV
• Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage
VR
30
V
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
PD
200 mW
1.57 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
635
−55
to150
°C/W
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 Minimum Pad
http://onsemi.com
30 VOLT SILICON
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
MARKING DIAGRAM
JVM G
1
G
2
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 3
JV
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BAT54HT1
BAT54HT1G
SOD−323
SOD−323
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
BAT54HT1/D
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