BAT54HT1G(2005) 查看數據表（PDF） - ON Semiconductor

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BAT54HT1G
(Rev.:2005)

Schottky Barrier Diodes

ON Semiconductor 

BAT54HT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (IR = 10 μA)

Total Capacitance (VR = 1.0 V, f = 1.0 MHz)

Reverse Leakage (VR = 25 V)

Forward Voltage (IF = 0.1 mAdc)

Forward Voltage (IF = 30 mAdc)

Forward Voltage (IF = 100 mAdc)

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1

V(BR)R

30

—

—

Volts

CT

—

7.6

10

pF

IR

—

0.5

2.0

μAdc

VF

—

0.22

0.24

Vdc

VF

—

0.41

0.5

Vdc

VF

—

0.52

0.8

Vdc

trr

—

—

5.0

ns

Forward Voltage (IF = 1.0 mAdc)

Forward Voltage (IF = 10 mAdc)

Forward Current (DC)

Repetitive Peak Forward Current

Non−Repetitive Peak Forward Current (t < 1.0 s)

VF

VF

IF

IFRM

IFSM

—

0.29

0.32

Vdc

—

0.35

0.40

Vdc

—

—

200

mAdc

—

—

300

mAdc

—

—

600

mAdc

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