BAT54H 查看數據表（PDF） - NXP Semiconductors.

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BAT54H

Schottky barrier single diode in small SOD123F package

NXP Semiconductors. 

NXP Semiconductors

BAT54H

Schottky barrier single diode in small SOD123F package

3. Ordering information

Table 3. Ordering information

Type number

Package

Name

BAT54H

SOD123F

Description

plastic surface-mounted package; 2 leads

Version

SOD123F

4. Marking

Table 4. Marking codes

Type number

BAT54H

Marking code

AG

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VR

reverse voltage

IF

forward current

IFRM

repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5

IFSM

non-repetitive peak forward

tp ≤ 10 ms; Tj(init) = 25 °C

current

Ptot

total power dissipation

Tamb = 25 °C

Tj

junction temperature

Tamb

ambient temperature

Tstg

storage temperature

Min Max Unit

-

30

V

-

200 mA

-

300 mA

-

600 mA

[1]

-

375 mW

-

125 °C

-65 125 °C

-65 150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Rth(j-a)

thermal resistance

in free air

[1]

from junction to

ambient

Rth(j-sp)

thermal resistance

[2]

from junction to solder

point

BAT54H

Product data sheet

All information provided in this document is subject to legal disclaimers.

25 July 2012

Min Typ Max Unit

-

-

330 K/W

-

-

70

K/W

© NXP B.V. 2012. All rights reserved

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