2N6738 查看數據表（PDF） - New Jersey Semiconductor
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2N6738 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2N6738
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS)
Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 5A; IB= 1A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 8A; IB= 4A
VeE(sat) Base-Emitter Saturation Voltage
ICEV
Collector Cutoff Current
I £80
Emitter Cutoff Current
lc= 5A; IB= 1A
VcEv=450V;VBE(off)=-1.5V
VcEv=450V;VBE(off)=-1.5V;Tj= 100°C
VEB= 8V; lc= 0
HFE
DC Current Gain
lc= 5A ; VCE= 3V
fr
Current-Gain — Bandwidth Product
lc= 0.2A; VCE= 10V, ftest= 1MHz
Switching Times; Resistive Load
td
Delay Time
tr
Rise Time
ts
Storage Time
tf
Fall Time
lc= 5A; IB1= -IB2= 1A,VCC= 125V;
tp= 20 u s, Duty Cycled 1%
MIN MAX UNIT
300
V
1
V
2
V
1.6
V
0.1
1.0
mA
2
mA
10
40
10
60
MHz
0.1
us
0.4
ns
2.5
us
0.5
ws
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