BAS40L 查看數據表（PDF） - ON Semiconductor

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BAS40L

Schottky Barrier Diodes

ON Semiconductor 

BAS40L, SBAS40L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

V

40

−

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

CT

pF

−

5.0

Reverse Leakage

(VR = 25 V)

IR

mAdc

−

1.0

Forward Voltage

(IF = 1.0 mAdc)

VF

mVdc

−

380

Forward Voltage

(IF = 10 mAdc)

VF

mVdc

−

500

Forward Voltage

(IF = 40 mAdc)

VF

Vdc

−

1.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

100

100

TA = 150°C

125°C

10

10

1.0 85°C

150°C

1.0 1 25°C

85°C

25°C

- 40°C - 55°C

0.1

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

VF, FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

3.5

0.1

0.01 25°C

0.001

0

5.0

10

15

20

25

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Reverse Current versus Reverse

Voltage

3.0

2.5

2.0

1.5

1.0

0.5

0

0 5.0 10 15 20 25 30 35 40

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Typical Capacitance

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