MPSL51 查看數據表（PDF） - Motorola => Freescale

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MPSL51

Amplifier Transistor PNP Silicon

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MPSL51/D

Amplifier Transistor

PNP Silicon

COLLECTOR

3

2

BASE

MPSL51

1

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

Collector – Base Voltage

Emitter – Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VCEO

VCBO

VEBO

IC

PD

–100

–100

–4.0

–600

625

5.0

Vdc

Vdc

Vdc

mAdc

mW

mW/°C

Total Device Dissipation @ TC = 25°C

PD

1.5

Watts

Derate above 25°C

12

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg – 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

Thermal Resistance, Junction to Case

RqJC

83.3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

°C/W

°C/W

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = –1.0 mAdc, IB = 0)

Collector – Base Breakdown Voltage

(IC = –100 mAdc, IE = 0)

Emitter – Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

Collector Cutoff Current

(VCB = –50 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = –3.0 Vdc, IC = 0)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

1

2

3

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Symbol

Min

Max

Unit

V(BR)CEO –100

V(BR)CBO –100

V(BR)EBO –4.0

ICBO

—

IEBO

—

—

—

—

–1.0

–100

Vdc

Vdc

Vdc

µAdc

nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1

© Motorola, Inc. 1996

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