SI2301 查看數據表（PDF） - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
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SI2301 Datasheet PDF : 3 Pages
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SI2301 Typical Characteristics
1.3
VDS=VGS
1.2 ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5 VDS=-6V
ID=-2.8A
4
3
2
1
0
0
3
6
9
12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
Plastic-Encapsulate Mosfets
VGS=0V
101
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
102
101
RDS(ON)Limit
1ms
10ms
100ms
100
1s
DC
10-1
TA=25 C
TJ=150 C
10-2 Single Pulse
10-1
100
101
102
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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