BZT52C2V4S 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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BZT52C2V4S Datasheet PDF : 5 Pages
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Electrical Characteristics (TA=25℃ unless otherwise noted)
Maximum
TYPE
Marking
Zener Voltage Range (Note 2)
Maximum Zener Impedance
(Note 3)
Reverse
Current
(Note 2)
VZ@IZT
IZT
ZZT@IZT
ZZK@IZK
IZK
IR
VR
Nom(V) Min(V) Max(V) (mA)
Ω
(mA) μA
V
BZT52C2V4S
WX
2.4
2.20
2.60
5
100
600
1.0 50 1.0
BZT52C2V7S
W1
2.7
2.5
2.9
5
100
600
1.0 20 1.0
BZT52C3V0S
W2
3.0
2.8
3.2
5
95
600
1.0 10 1.0
BZT52C3V3S
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
BZT52C3V6S
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
BZT52C3V9S
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
BZT52C4V3S
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
BZT52C4V7S
W7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
BZT52C5V1S
W8
5.1
4.8
5.4
5
60
480
1.0
2
2.0
BZT52C5V6S
W9
5.6
5.2
6.0
5
40
400
1.0
1
2.0
BZT52C6V2S
WA
6.2
5.8
6.6
5
10
150
1.0
3
4.0
BZT52C6V8S
WB
6.8
6.4
7.2
5
15
80
1.0
2
4.0
BZT52C7V5S
WC
7.5
7.0
7.9
5
15
80
1.0
1
5.0
BZT52C8V2S
WD
8.2
7.7
8.7
5
15
80
1.0 0.7 5.0
BZT52C9V1S
WE
9.1
8.5
9.6
5
15
100
1.0 0.5 6.0
BZT52C10S
WF
10
9.4
10.6
5
20
150
1.0 0.2 7.0
BZT52C11S
WG
11
10.4
11.6
5
20
150
1.0 0.1 8.0
BZT52C12S
WH
12
11.4
12.7
5
25
150
1.0 0.1 8.0
BZT52C13S
WI
13
12.4
14.1
5
30
170
1.0 0.1 8.0
BZT52C15S
WJ
15
13.8
15.6
5
30
200
1.0 0.1 10.5
BZT52C16S
WK
16
15.3
17.1
5
40
200
1.0 0.1 11.2
BZT52C18S
WL
18
16.8
19.1
5
45
225
1.0 0.1 12.6
BZT52C20S
WM
20
18.8
21.2
5
55
225
1.0 0.1 14.0
BZT52C22S
WN
22
20.8
23.3
5
55
250
1.0 0.1 15.4
BZT52C24S
WO
24
22.8
25.6
5
70
250
1.0 0.1 16.8
BZT52C27S
WP
27
25.1
28.9
2
80
300
0.5 0.1 18.9
BZT52C30S
WQ
30
28.0
32.0
2
80
300
0.5 0.1 21.0
BZT52C33S
WR
33
31.0
35.0
2
80
325
0.5 0.1 23.1
BZT52C36S
WS
36
34.0
38.0
2
90
350
0.5 0.1 25.2
BZT52C39S
WT
39
37.0
41.0
2
130
350
0.5 0.1 27.3
Notes:1. Device mounted on ceramic PCB 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2 .
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
Typical
Temperature
Coefficient
@IZTC mV/℃
Min Max
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0.2
-2.7
1.2
-2
2.5
0.4
3.7
1.2
4.5
2.5
5.3
3.2
6.2
3.8
7.0
4.5
8.0
5.4
9.0
6.0
10.0
7.0
11.0
9.2
13
10.4
14
12.4
16
14.4 18.0
16.4 20.0
18.4 22.0
21.4 25.3
24.4 29.4
27.4 33.4
30.4 37.4
33.4 41.2
Test
Current
IZTC
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
High Diode Semiconductor
2
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