BZT52C2V4S 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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BZT52C2V4S Datasheet PDF : 5 Pages
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Typical Characteristics
Zener Characteristics(V Up to 10 V)
Z
100
T =25℃
a
Pulsed
P =200mW
D
10
Zener Characteristics(11 V to 39 V)
100
T =25℃
a
Pulsed
10
P =200mW
D
1
0.5
1
2
3
4
5
6
7
8
9
V , ZENER VOLTAGE (V)
Z
Temperature Coefficients
40
TYPICAL T VALUES
35
a
FOR BZT52C2V4S SERIES
30
25
10
11
20
V @I
Z
ZT
15
10
5
0
-5
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
V , NOMINAL ZENER VOLTAGE (V)
Z
Typical Capacitance
1000
T =25℃
a
0V BIAS
100
1V BIAS
10
BIAS AT
50% OF V NOM
Z
1
1
250
200
150
100
50
0
0
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
Power Derating Curve
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
1
0.5
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42
V , ZENER VOLTAGE (V)
Z
Typical Leakage Current
100
10
1
0.1
0.01
1E-3
T =100℃
a
1E-4
0
T =25℃
a
5
10
15
20
25
30
35
40
V , NOMINAL ZENER VOLTAGE (V)
Z
Effect of Zener Voltage on Zener Impedance
1000
I =1mA
Z
T =25℃
a
I =0.1I
Z(AC)
Z(DC)
f=1kHz
100
5mA
10
1
1
10
100
V , NOMINAL ZENER VOLTAGE (V)
Z
High Diode Semiconductor
3
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