MBRF745-E3 查看數據表（PDF） - Vishay Semiconductors
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MBRF745-E3 Datasheet PDF : 5 Pages
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MBR745, MBR760, MBRF745
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
8
6
4
2
MBR745
MBR760
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
MBR745
MBR760
10
1
TJ = 125 °C
0.1
TJ = 75 °C
0.01
0.001
0
TJ = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
175
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
150
125
100
75
50
25
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
MBR745
MBR760
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
TJ = 125 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
0.1
0.01
0
MBR745
MBR760
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 27-Nov-17
3
Document Number: 88680
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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