IRFR320B 查看數據表（PDF） - Fairchild Semiconductor
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IRFR320B Datasheet PDF : 9 Pages
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Typical Characteristics
101 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
7
6
VGS = 10V
5
V = 20V
4
GS
3
2
※ Note : TJ = 25℃
1
0
3
6
9
12
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1000
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
C
iss
400
Coss
※ Notes :
200
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. V = 40V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 80V
DS
10
V = 200V
DS
8
VDS = 320V
6
4
2
※ Note : ID = 3.3 A
0
0
3
6
9
12
15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, March 2001
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