IRF450 查看數據表（PDF） - Nell Semiconductor Co., Ltd
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IRF450 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
IRF450 Series RRooHHSS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
10000
5000
VGS = 0V, f = 1MHz
Ciss = Cgs +Cgd (Cds shorted )
Coss = Cds +Cgd
Crss = Cgd
4000
3000
Ciss
2000
1000
0
100
Coss
Crss
101
Drain-Source voltage, VSD (V)
Fig.7 Typical gate charge vs. gate-to-source
voltage
20
ID = 14 A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
0
0 20 40 60 80 100 120 140
Total gate charge, QG (nC)
Fig.6 Typical source-drain diode forward
voltage
101
150ºC
25ºC
100
0.4
VGS = 0V
0.8
1.2
1.6
2.0
Source-Drain voltage, VSD (V)
Fig.8 Maximum safe operating area
103
102
10
Operation in This Area is Limited by RDS(ON)
10µs
100µs
1
0.1
1
1ms
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10ms
10
102
103
Drain-source voltage, VDS(V)
Fig.9 Maximum drain current vs.
Case temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
Case temperature, TC (°C)
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