BUT12 查看數據表（PDF） - Philips Electronics
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BUT12 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12; BUT12A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEOsust collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see
BUT12
Figs 6 and 7
400 −
−
V
BUT12A
450 −
−
V
VCEsat collector-emitter saturation voltage
BUT12
IC = 6 A; IB = 1.2 A; see Figs 8 and 10 −
−
1.5 V
BUT12A
IC = 5 A; IB = 1 A; see Figs 8 and 10 −
−
1.5 V
VBEsat base-emitter saturation voltage
BUT12
IC = 6 A; IB = 1.2 A; see Fig.8
−
−
1.5 V
BUT12A
IC = 5 A; IB = 1 A; see Fig.8
−
−
1.5 V
ICES
collector-emitter cut-off current
VCE = VCESmax; VBE = 0; note 1
−
−
1
mA
VCE = VCESmax; VBE = 0; Tj = 125 °C; −
−
3
mA
note 1
IEBO
emitter-base cut-off current
hFE
DC current gain
VEB = 9 V; IC = 0
VCE = 5 V; IC = 10 mA; see Fig.11
VCE = 5 V; IC = 1 A; see Fig.11
−
−
10 mA
10 18 35
10 20 35
Switching times resistive load (see Figs 12 and 13)
ton
turn-on time
BUT12
BUT12A
ts
storage time
BUT12
BUT12A
tf
fall time
BUT12
BUT12A
ICon = 6 A; IBon = −IBoff = 1.2 A
ICon = 5 A; IBon = −IBoff = 1 A
ICon = 6 A; IBon = −IBoff = 1.2 A
ICon = 5 A; IBon = −IBoff = 1 A
ICon = 6 A; IBon = −IBoff = 1.2 A
ICon = 5 A; IBon = −IBoff = 1 A
−
−
1
µs
−
−
1
µs
−
−
4
µs
−
−
4
µs
−
−
0.8 µs
−
−
0.8 µs
Switching times inductive load (see Figs 14 and 15)
ts
storage time
BUT12
BUT12A
tf
fall time
BUT12
BUT12A
ICon = 6 A; IBon = 1.2 A; VCL = 250 V; −
Tc = 100 °C
ICon = 5 A; IBon = 1 A; VCL = 300 V;
−
Tc = 100 °C
ICon = 6 A; IBon = 1.2 A; VCL = 250 V; −
Tc = 100 °C
ICon = 5 A; IBon = 1 A; VCL = 300 V;
−
Tc = 100 °C
1.9 2.5 µs
1.9 2.5 µs
200 300 ns
200 300 ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
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