BUT12 查看數據表（PDF） - Philips Electronics
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BUT12 Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12; BUT12A
102
andbook, full pagewidth
MGB945
IC
(A)
ICM max
10
IC max
(1)
δ = 0.01
II
1
tp =
20 µs
50 µs
100 µs
200 µs
I
10−1
10−2
10
(2)
BUT12
BUT12A
102
500 µs
III
1 ms
2 ms
5 ms
10 ms
20 ms
DC
103
VCE (V)
104
10−2
IC
III
(A)
BUT12
BUT12A
10−3
IV
400 1000
VCE (V)
Tmb < 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
(1) Ptot max and Ptot peak max lines.
(2) Second breakdown limits.
Fig.4 Forward bias SOAR.
1997 Aug 13
4
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