BUT12 查看數據表（PDF） - Inchange Semiconductor

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BUT12

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUT12

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0, L= 25mH

400

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A

VBE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 6A; IB=B 1.2A

VCE=RatedVCES ;VBE= 0

VCE=RatedVCES ;VBE= 0;TC=125℃

VEB= 9V; IC= 0

1.5

V

1.5

V

1

3

mA

10 mA

hFE-1

DC Current Gain

IC= 10mA; VCE= 5V

10

35

hFE-2

DC Current Gain

IC= 1A; VCE= 5V

10

35

Switching Times ;Resistive Load

ton

Turn-on Time

ts

Storage Time

tf

Fall Time

IC= 6A; IB1= -IB2=1.2A

1.0 μs

4.0 μs

0.8 μs

isc Website：www.iscsemi.cn

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