BU505DF 查看數據表（PDF） - Philips Electronics
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BU505DF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BU505F; BU505DF
handbook, full pagewidth
102
IC
(A)
10
ICM max
IC max
1
MGB932
II
10−1
I
10−2
10−3
10−4
1
10
102
103 VCE (V) 104
Mounted with heatsink compound and 30 ±5 N force on centre of package.
Th = 25 °C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.5 Forward bias SOAR.
1997 Aug 13
6
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