MBR20100CT(Rev7-2) 查看數據表（PDF） - Diodes Incorporated.
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MBR20100CT Datasheet PDF : 2 Pages
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MBR2070CT - MBR20100CT
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
• Guard Ring Die Construction for
Transient Protection
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
• Lead Free Finish/RoHS Compliant (Note 3)
Mechanical Data
• Case: TO-220AB
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Polarity: As Marked on Body
• Terminals: Finish – Tin. Solderable per MIL-STD-202,
Method 208
• Marking: Type Number
• Ordering Information: See Page 2
• Weight: 2.24 grams (approximate)
TO-220AB
Dim Min Max
A 14.48 15.75
B
10.00 10.40
C
2.54 3.43
D
5.90 6.40
E
2.80 3.93
G 12.70 14.27
H
2.40 2.70
J
0.69 0.93
K
3.54 3.78
L
4.07 4.82
M
1.15 1.39
N
0.30 0.50
P
2.04 2.79
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
VRRM
VRWM
VR
VR(RMS)
MBR
2070CT
70
49
MBR
2080CT
80
56
MBR
2090CT
90
63
Average Rectified Output Current (Note 1)
@ TC = 120°C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
Forward Voltage Drop
@ IF = 10A, Tj = 125°C
@ IF = 10A, Tj = 25°C
@ IF = 20A, Tj = 125°C
VFM
@ IF = 20A, Tj = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage (Note 4)
@ TA = 25°C
@ TA = 125°C
IRM
Typical Total Capacitance (Note 2)
CT
20
150
0.75
0.85
0.85
0.95
0.10
100
1000
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change
RθJC
dV/dt
2.0
10000
Operating Temperature Range
Tj
-55 to +150
Storage Temperature Range
TSTG
-55 to +175
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
4. Short duration pulse test to minimize self-heating effect.
MBR
20100CT
Unit
100
V
70
V
A
A
V
mA
pF
°C/W
V/μs
°C
°C
DS30019 Rev. 7 - 2
1 of 2
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MBR2070CT-MBR20100CT
© Diodes Incorporated
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