DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MBR20100CTF-E1 查看數據表(PDF) - Diodes Incorporated.

零件编号
产品描述 (功能)
生产厂家
MBR20100CTF-E1
Diodes
Diodes Incorporated. Diodes
MBR20100CTF-E1 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical Characteristics
Characteristic
Maximum Instantaneous Forward Voltage Drop
(Note 7)
Maximum Instantaneous Reverse Current (Note 7)
Symbol
VF
IR
Rating
0.85
0.75
6.0
0.1
MBR20100C
Unit
Test Condition
IF = 10A, TC = +25C
V
IF = 10A, TC = +125C
Rated DC Voltage, TC = +125C
mA
Rated DC Voltage, TC = +25C
Note 7: Short duration pulse test used to minimize self-heating effect, Pulse Test Width = 300µs, Duty Cycle < 2.0%.
100
10
T =150oC
J
1
0.1
T =125oC
J
T =25oC
J
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 1. Typical Forward Voltage Per Diode
20
18
Note 6
16
14
12
10
8
6
4
2
0
115 120 125 130 135 140 145 150 155 160
T , Case Temperature (0C)
C
Figure 3. Average Rectified Forward Current vs.
Case Temperature (Per Diode)
10000
1000
T =150oC
J
100
T =125oC
J
10
1
0.1
T =25oC
0.01
J
1E-3
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typical Reverse Current Per Diode
MBR20100C
Document number: DS36950 Rev. 5 - 2
6 of 13
www.diodes.com
July 2015
© Diodes Incorporated

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]