BC847AT 查看數據表（PDF） - Galaxy Semi-Conductor
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BC847AT Datasheet PDF : 4 Pages
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Production specification
NPN general purpose Transistor
BC847AT/BT/CT
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO IE=1μA,IC=0
6
V
Collector cut-off current
DC current gain
ICBO
BC847AT
BC847BT hFE
BC847CT
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
VCB=30V,IE=0
110
VCE=5V,IC=2mA
200
420
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V,
100
IC=10mA,f=100KHz
0.1 μA
220
450
800
0.25
V
0.6
0.7
V
0.9
MHz
Collector output capacitance
Noise figure
Cob
VCE=5V,f=1KHz
NF
VCE=5V,f=1KHz
RS=2KΩ,BW=200Hz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
4.5 Pf
10
dB
4
H001
Rev.A
www.gmicroelec.com
2
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