2N6039 查看數據表（PDF） - Inchange Semiconductor
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2N6039 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6037 2N6038 2N6039
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N6037
40
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6038 IC=0.1A ;IB=0
60
V
2N6039
80
VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=8mA
2.0
V
VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=40mA
3.0
V
VBEsat Base-emitter saturation voltage
IC=4A; IB=40mA
4.0
V
VBE
Base-emitter on voltage
IC=2A ; VCE=3V
2.8
V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
ICBO
Collector cut-off current
VCE=Rated VCEO; IB=0
VCE=Rated VCEO; VBE(off)=1.5V
TC=125℃
VCB=Rated VCBO; IE=0
0.1
mA
0.1
0.5
mA
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=3V
500
hFE-2
DC current gain
IC=2A ; VCE=3V
750
15000
hFE-3
DC current gain
IC=4A ; VCE=3V
100
COB
Output capacitance
IE=0;VCB=10V;f=0.1MHz
100
pF
2
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