1·0
60%
40%
20%
10%
0·1 0%
0·01
10-4
BULD125KC
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
LD125CZC
BULD125KC
TC = 25°C
t1
duty cycle = t1/t2
Read time at end of t1,
t2
TJ (max)
–
TC
=
PD (peak)
•
ZθJC
RθJC
•
RθJC (max)
10-3
10-2
10-1
100
101
102
t1 - Power Pulse Duration - s
Figure 7.
1000
0%
100
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
LD125CPA
BULD125KC
TA = 25°C
10%
10 20%
40%
60%
1·0
10-4
10-3
10-2
10-1
100
101
102
103
t1 - Power Pulse Duration - s
Figure 8.
PRODUCT INFORMATION
5