IRFBC40A(2008) 查看數據表（PDF） - Vishay Semiconductors
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IRFBC40A Datasheet PDF : 8 Pages
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IRFBC40A, SiHFBC40A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.7 Ab
VDS = 50 V, ID = 3.7 A
600
-
-
V
-
0.66
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
1.2
Ω
3.4
-
-
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VDS = 1.0 V, f = 1.0 MHz
-
VGS = 0 V VDS = 480 V, f = 1.0 MHz
-
VDS = 0 V to 480 Vc
-
-
VGS = 10 V
ID = 6.2 A, VDS = 480 V
see fig. 6 and 13b
-
-
-
VDD = 300 V, ID = 6.2 A
-
RG = 9.1 Ω, RD = 47 Ω,
see fig. 10b
-
-
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
G
-
S
1036
-
136
-
7.0
-
pF
1487
-
36
-
48
-
-
42
-
10
nC
-
20
13
-
23
-
ns
31
-
18
-
-
6.2
A
-
25
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
431
647
ns
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/µsb
Qrr
-
1.8
2.8
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91112
S-81262-Rev. B, 07-Jul-08
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