D84DM2(V2) 查看數據表（PDF） - New Jersey Semiconductor
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D84DM2 Datasheet PDF : 2 Pages
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electrical Characteristics (T"c= 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGs = 0V, ID = 250 //A)
IRF630/D84DN2 BVDSS
200
—
IRF631/D84DM2
150
Zero Gate Voltage Drain Current
(VDS = Max Rating, VQS = 0V, Tc = 25°C)
(VDS = Max Rating, x 0.8, VGS = 0V, TC = 125°C)
IDSS
—
—
Gate-Source Leakage Current
(VGs = ±20V)
IGSS
—
—
on characteristics'
Gate Threshold Voltage
(VDS = VGS. ID = 250 MA)
On-State Drain Current
(VQS = 10V, VDS = 10V)
Static Drain-Source On-State Resistance
(VGs = iov, ID = S.OA)
Forward Transconductance
(VDS = 10V, ID = 5.0A)
TC = 25°C VGS(TH)
2.0
—
ID (ON)
9.0
—
RDS(ON)
—
0.34
Qfs
2.4
3.0
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VQS = 0V
VDS = 25V
f = 1 MHz
CjSS
—
650
coss
—
150
Crss
—
30
switching characteristics'
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDS = 90V
tyon)
—
15
ID = 5.0A, VQS = 15V
tr
—
25
RGEN = son, RGS = i2.sn 4d(off)
—
30
(RGS(EQUIV.)=10n)
tf
—
20
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(TC = 25°C, VGS = OV,IS = 9.0A)
Reverse Recovery Time
(ls = 9.0A, dls/dt = 100A///sec, Tc = 125°C)
"Pulse Test: Pulse width < 300 /js. duty cycle < 2%
is
—
—
ISM
—
—
VSD
—
1.0
trr
—
300
QRR
2.5
MAX
UNIT
—
Volts
250
A/A
1000
±500
nA
4.0
Volts
—
A
0.4
Ohms
—
mhos
800
PF
450
PF
150
PF
—
ns
—
ns
—
ns
—
ns
9.0
A
36.0
A
2.0
Volts
ns
PC
60
40
±
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V
s. s
X^ s
.
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^V
X.
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s ^ x^
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5 4S
12
U
! ,,o
| 0.8
\
Xx \.s ^ V ,™
^OPERATION IN THIS AREA ^ V S
MAY BE LIM
X s .
Turns
^ s^V
°.06
0.4
SI NGLE PULSE
X »t 100ms
IRF630/D84DN2 :
0.2
V2S-C
IRF631/D84DM2-^-
|
0!
10
20
40 6080100 200 400600 1000
VDt, DRAIN-SOURCE VOLTAGE IVOLTS)
MAXIMUM SAFE OPERATING AREA
24
22
2.0
g jEj 1'8
j 1.6
I 1.4
0.8
0.6
I
CONDITIONS:
RDS(ON) CONDITIONS IQ = 5.0 A, VQC, = 10V
VGS(TH) CONDITIONS: ID = 2KVA, VD"S = VQS
0
40
80
Tj. JUNCTION TEMPERATURE I"C>
TYPICAL NORMALIZED RDSION, AND VQSITHI VS. TEMP.
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