IRF520NL 查看數據表（PDF） - Kersemi Electronic Co., Ltd.
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IRF520NL Datasheet PDF : 10 Pages
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IRF520NS/L
600
V GS = 0V,
f = 1MHz
C iss = C gs + C gd , Cds S H O R TE D
500
C rss = C gd
Ciss C oss = C ds + C gd
400
300
C oss
200
C rss
100
0
A
1
10
100
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 5.7A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 17 5°C
10
TJ = 2 5°C
1
VGS = 0V A
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
OP ER ATIO N IN TH IS A RE A LIM ITED
BY R DS(on)
10µs
10
100µs
1m s
1
10ms
TC = 25°C
TJ = 175°C
S ing le P u lse
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area
2014-8-26
4
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