SIR-320ST3F 查看數據表（PDF） - ROHM Semiconductor

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SIR-320ST3F

Infrared light emitting diode, top view type

ROHM Semiconductor 

Sensors

SIR-320ST3F

Infrared light emitting diode, top view type

SIR-320ST3F

The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous

efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

marking it ideal for compact optical control equipment.

zApplications

Optical control equipment

Light source for remote control devices

zFeatures

1) Compact (φ3.1mm).

2) High efficiency, high output PO=9.0mW (IF=50mA).

3) Wide radiation angle θ=±18deg.

4) Emission spectrum well suited to silicon detectors

(λP=940nm).

5) Good current-optical output linearity.

6) Long life, high reliability.

zDimensions (Unit : mm)

φ3.8±0.3

φ3.1±0.2

4−0.6

Notes:

1. Unspecified tolerance

shall be ±0.2.

2. Dimension in parenthesis are

show for reference.

2− 0.5

2

1

(2.5)

1 Anode

2 Cathode

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Forward current

Reverse voltage

Power dissipation

Pulse forward current

Operating temperature

Storage temperature

∗ Pulse width=0.1msec, duty ratio 1%

Symbol

Limits

Unit

IF

75

mA

VR

5

V

PD

100

mW

IFP∗

0.5

A

Topr

−25 to +85

°C

Tstg

−40 to +85

°C

Rev.B

1/3

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