BD132 查看數據表（PDF） - SavantIC Semiconductor
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BD132 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD132
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat-1 Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VCEsat-2 Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBEsat-1 Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
VBEsat-2 Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.3
V
-0.7
V
-1.2
V
-1.5
V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VCB=-50V; IE=0
VCB=-50V; IE=0 Tj=150
VEB=-5V; IC=0
IC=-0.5A ; VCE=-12V
40
IC=-2A ; VCE=-1V
20
-50
nA
-10
µA
-50
nA
fT
Transition frequency
IC=-0.25A; VCE=-5V ;f=100MHz 60
MHz
2
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