MTB10010U 查看數據表（PDF） - Philips Electronics

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MTB10010U

NPN microwave power transistor

Philips Electronics 

Philips Semiconductors

NPN microwave power transistor

Product specification

MTB10010U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VCES

VEBO

IC

Ptot

Tstg

Tj

Tsld

collector-base voltage

collector-emitter voltage

collector-emitter voltage

emitter-base voltage

collector current (average)

total power dissipation

storage temperature

junction temperature

soldering temperature

open emitter

open base

RBE = 0 Ω

open collector

Tmb < 75 °C; tp = 1 µs; δ = 1%

t ≤ 10 s; note 1

Note

1. Up to 0.3 mm from ceramic.

MIN.

−

−

−

−

−

−

−65

−

−

MAX.

40

15

40

3

0.75

36

+200

200

235

UNIT

V

V

V

V

A

W

°C

°C

°C

handbook,5h0alfpage

Ptot

(W)

40

30

MGA037

20

10

0

–50

0

50 100 150 200 250

Tmb (oC)

Ptot max = 36 W under the nominal pulse conditions.

Fig.2 Power derating curve.

handbook,1h2alfpage

PL

(W)

8

MGA038

4

0

0

0.5

1

1.5

2

Pi (W)

VCC = 24 V; tp = 1 µs; δ = 1%; f = 1030 MHz.

Fig.3 Load power as a function of input power.

1997 Feb 20

3

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