74HC7403 查看數據表（PDF） - NXP Semiconductors.

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74HC7403

4-bit x 64-word FIFO register; 3-state

NXP Semiconductors. 

NXP Semiconductors

74HC7403; 74HCT7403

4-bit x 64-word FIFO register; 3-state

7. Functional description

A DIR flag indicates the input stage status, either empty and ready to receive data (DIR =

HIGH) or full and busy (DIR = LOW). When DIR and SI are HIGH, data present at D0 to

D3 is shifted into the input stage; once complete DIR goes LOW. When SI is set LOW,

data is automatically shifted to the output stage or to the last empty location. DIR set

HIGH indicates a FIFO which can receive data.

A DOR flag indicates the output stage status, either data available (DOR = HIGH) or busy

(DOR = LOW). When SO and DOR are HIGH, data is available at the outputs (Q0 to Q3).

When SO is set LOW new data may be shifted into the output stage, once complete DOR

is set HIGH.

7.1 Expanded format

The DOR and DIR signals are used to allow the 74HC7403; 74HCT7403 to be cascaded.

Both parallel and serial expansion is possible. (see Figure 18).

Serial expansion is only possible with typical devices.

7.1.1 Parallel expension

Parallel expension is accomplished by logically ANDing the DOR and DIR signals to form

a composite signal.

7.1.2 Serial expension

Serial expension is accomplished by:

• Tying the data outputs of the first device to the data inputs of the second device.

• Connecting the DOR pin of the first device to the SI pin of the second device.

• Connecting the SO pin of the first device to the DIR pin of the second device.

8. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min Max Unit

VCC

supply voltage

IIK

input clamping current

VI < 0.5 V or VI > VCC + 0.5 V

IOK

output clamping current VO < 0.5 V or VO > VCC + 0.5 V

IO

output current

VO = 0.5 V to (VCC + 0.5 V)

0.5 +7

V

-

20 mA

-

20 mA

-

35 mA

ICC

IGND

Tstg

Ptot

supply current

ground current

storage temperature

total power dissipation

DIP16 package

SO16 package

-

-

65

[1] -

[2] -

+70 mA

70 mA

+150 C

750 mW

500 mW

[1] For DIP16 packages: above 70 C the value of Ptot derates linearly with 12 mW/K.

[2] For SO16 packages: above 70 C the value of Ptot derates linearly with 8 mW/K.

74HC_HCT7403

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 4 — 24 September 2012

© NXP B.V. 2012. All rights reserved.

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