BSH105 查看數據表（PDF） - ZP Semiconductor
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BSH105 Datasheet PDF : 2 Pages
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BSH105
N-channel enhancement mode
MOS transistor
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
gfs
IGSS
IDSS
Qg(tot)
Qgs
Qgd
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 10 µA
VDS = VGS; ID = 1 mA
Tj = 150˚C
VGS = 4.5 V; ID = 0.6 A
VGS = 2.5 V; ID = 0.6 A
VGS = 1.8 V; ID = 0.3 A
VGS = 2.5 V; ID = 0.6 A; Tj = 150˚C
VDS = 16 V; ID = 0.6 A
VGS = ±8 V; VDS = 0 V
VDS = 16 V; VGS = 0 V;
Tj = 150˚C
ID = 1 A; VDD = 20 V; VGS = 4.5 V
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VDD = 20 V; ID = 1 A;
VGS = 8 V; RG = 6 Ω
Resistive load
VGS = 0 V; VDS = 16 V; f = 1 MHz
MIN. TYP. MAX. UNIT
20 -
-
V
0.4 0.57 -
V
0.1 -
-
V
- 140 200 mΩ
- 180 250 mΩ
- 240 300 mΩ
- 270 375 mΩ
0.5 1.6 -
S
- 10 100 nA
- 50 100 nA
- 1.3 10 µA
- 3.9 - nC
- 0.4 - nC
- 1.4 - nC
-
2
- ns
- 4.5 - ns
- 45 - ns
- 20 - ns
- 152 - pF
- 71 - pF
- 33 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
Ta = 25 ˚C
current
IDRM
Pulsed reverse drain current
VSD
Diode forward voltage
IF = 0.5 A; VGS = 0 V
trr
Reverse recovery time
IF = 0.5 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 16 V
MIN. TYP. MAX. UNIT
-
- 1.05 A
-
-
4.2 A
- 0.74 1
V
-
27
-
ns
-
19
-
nC
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