13N60A 查看數據表（PDF） - Nell Semiconductor Co., Ltd
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13N60A Datasheet PDF : 8 Pages
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SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Diode forward voltage
ISD = 6.5A, VGS = 0V
1.2
V
IS(ISD)
Continuous source to drain current
ISM
Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
13
A
39
S (Source)
trr
Reverse recovery time
Qrr
Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
ISD = 6.5A, VGS = 0V,
dIF/dt = 100A/µs
280
ns
3.5
μC
ORDERING INFORMATION SCHEME
Current rating, ID
13 = 13A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
13 N 60 A
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
VGS
Same Type
as D.U.T.
* lSD controlled by pulse period
* D.U.T.-Device under test
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
P.W.
Period
P.W.
D=
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
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