23A003 查看數據表（PDF） - GHz Technology

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23A003

0.3 Watts, 15 Volts, Class A Linear to 2300 MHz

GHz Technology 

23A003

0.3 Watts, 15 Volts, Class A

Linear to 2300 MHz

GENERAL DESCRIPTION

The23A003 is a COMMON EMITTER transistor capable of providing 0.3

Watts of Class A, RF output power to 2300 MHz. This transistor is

specifically designed for general Class A amplifier applications. It utilizes

gold metalization and diffused ballasting to provide high reliability and

supreme ruggedness. The transistor uses a fully hermetic High Temperature

Solder Sealed package.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25oC

3.0 Watts

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

BVebo

Emitter to Base Voltage

Ic

Collector Current

50 Volts

3.5 Volts

0.3 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200oC

+ 200oC

CASE OUTLINE

55BT, STYLE 2

B08

ELECTRICAL CHARACTERISTICS @ 25 OC

SYMBOL CHARACTERISTICS

TEST CONDITIONS

Pout

Pin

Pg

Ft

VSWR

Power Out

Power Input

Power Gain

Transition Frequency

Load Mismatch Tolerance

F = 2.3 GHz

Ic = 100 mA

Vcc = 15 Volts

Vce = 15V, Ic =100 mA

MIN

0.3

10.0

4.2

TYP

11.0

4.5

MAX UNITS

Watts

0.03

Watts

dB

GHz

10:1

BVebo

Emitter to Base Breakdown

Ie = 2 mA

3.5

BVces

Collector to Emitter Breakdown Ic = 20 mA

50

BVceo

Collector to Emitter Breakdown Ic = 20 mA

20

hFE

DC Current Gain

Cob

Capacitance

θjc

Thermal Resistance

Vce = 5 V, Ic = 100 mA 20

Vcb = 20V, f = 1 MHz

2.5

45

Volts

Volts

Volts

pF

oC/W

Initial Issue November 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE

THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE

PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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