BC817-40LT1(2001) 查看數據表（PDF） - ON Semiconductor
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BC817-40LT1 Datasheet PDF : 8 Pages
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ON Semiconductort
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
VCEO
VCBO
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VEBO
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board, (1)
PD
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
Value
45
50
5.0
500
Max
225
1.8
556
300
2.4
417
–55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
Emitter–Base Breakdown Voltage
(IE = –1.0 mA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Unit
V
V
V
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
BC817-16LT1
BC817-25LT1
BC817-40LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
Min
Typ
Max
Unit
45
—
—
V
50
—
—
V
5.0
—
—
V
—
—
100
nA
—
—
5.0
µA
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 4
Publication Order Number:
BC817–16LT1/D
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