BC817-25LT1(2001) 查看數據表（PDF） - ON Semiconductor

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BC817-25LT1
(Rev.:2001)

General Purpose Transistors

ON Semiconductor 

BC817–16LT1 BC817–25LT1 BC817–40LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min

Typ

Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 1.0 V)

(IC = 500 mA, VCE = 1.0 V)

BC817–16

BC817–25

BC817–40

hFE

—

100

—

250

160

—

400

250

—

600

40

—

—

Collector–Emitter Saturation Voltage

(IC = 500 mA, IB = 50 mA)

VCE(sat) —

—

0.7

V

Base–Emitter On Voltage

(IC = 500 mA, VCE = 1.0 V)

VBE(on) —

—

1.2

V

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

—

—

MHz

Output Capacitance

(VCB = 10 V, f = 1.0 MHz)

Cobo

—

10

—

pF

1000

VCE = 1 V

TJ = 25°C

100

10

0.1

1.0

10

100

1000

IC, COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

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