KSC5402D(2002) 查看數據表（PDF） - Fairchild Semiconductor
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KSC5402D Datasheet PDF : 10 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
Cib
Cob
fT
VF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Current Gain Bandwidth Product
Diode Forward Voltage
IC=1mA, IE=0
IC=5mA, IB=0
IE=1mA, IC=0
VCES=1000V,
IEB=0
TC=25°C
TC=125°C
VCE=450V, VB=0 TC=25°C
TC=125°C
VEB=10V, IC=0
VCE=1V, IC=0.4A TC=25°C
TC=125°C
VCE=1V, IC=1A TC=25°C
TC=125°C
IC=0.4, IB=0.04A TC=25°C
TC=125°C
IC=1A, IB=0.2A TC=25°C
TC=125°C
IC=0.4A,
IB=0.04A
TC=25°C
TC=125°C
IC=1A, IB=0.2A TC=25°C
TC=125°C
VEB=8V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.5A, VCE=10V
IF=1A
TC=25°C
IF=0.2A
TC=25°C
TC=125°C
IF=0.4A
TC=25°C
TC=125°C
Min.
1000
450
12
14
8
6
4
Typ.
1090
525
14
0.03
1.2
0.3
15
0.01
29
17
9
6
0.25
0.4
0.3
0.65
0.78
0.65
0.85
0.75
330
35
11
0.86
0.75
0.6
0.8
0.65
Max.
100
500
100
500
100
Units
V
V
V
µA
µA
µA
0.6
1.0
0.75
V
1.2
V
1.0
V
0.9
V
1.1
V
1.0
V
500 pF
100 pF
MHz
1.5
V
1.2
V
V
1.3
V
V
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
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