KSC5402D(2002) 查看數據表（PDF） - Fairchild Semiconductor
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KSC5402D Datasheet PDF : 10 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
tfr
Diode Froward Recvery Time
IF=0.2A
(di/dt=10A/µs)
IF=0.4A
IF=1A
VCE(DSAT) Dynamic Saturation Voltage
IC=0.4A,
IB1=40mA
VCC=300V
IC=1A,
IB1=200mA
VCC=300
RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20µs)
@ 1µs
@ 3µs
@ 1µs
@ 3µs
tON
Turn On Time
tOFF
Turn Off Time
INDUCTIVE LOAD SWITCHING (VCC=15V)
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
tSTG
Storage Time
tF
Fall Time
tC
Cross-over Time
IC=1A,
IB1=200mA
IB2=150mA
VCC=300V
RL = 300Ω
IC=0.4A,
IB1=40mA
IB2=200mA,
Vz=300V
LC=200H
IC=0.8A,
IB1=160mA
IB2=160mA,
Vz=300V
LC=200H
IC=1A,
IB1=200mA,
IB2=500mA,
VZ=300V
LC=200µH
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
TC=25°C
TC=125°C
Min
0.95
Typ.
540
520
480
7.5
2.5
11.5
1.5
110
135
1.4
0.56
0.7
60
75
90
90
3
110
180
125
185
1.1
1.35
105
75
125
100
Max.
Units
ns
ns
ns
V
V
V
V
150 ns
ns
1.25 µs
µs
0.65 µs
µs
175 ns
ns
175 ns
ns
2.75 µs
µs
175 ns
ns
350 ns
ns
1.2
µs
µs
150 ns
ns
150 ns
ns
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
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