IRF520A 查看數據表（PDF） - Fairchild Semiconductor
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IRF520A Datasheet PDF : 7 Pages
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IRF520A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
2. ID = 250µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
0.5
1. VGS = 10 V
2. ID = 4.6 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [oC]
102
101
100
10-1
100
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by RDS(on)
100 µs
1 ms
10 ms
DC
@ Notes :
1. T = 25oC
C
2. TJ = 175 oC
3. Single Pulse
101
102
VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
10
8
6
4
2
0
25
50
75
100
125
150
175
Tc , Case Temperature [oC]
Fig 11. Thermal Response
D=0.5
100
0.2
0.1
0.05
10- 1 0.02
0.01
single pulse
@ Notes :
1. Zθ J C(t)=3.31 o C/W Max.
2. Duty Factor, D=1t/t2
3. TJ M-TC =PD M*Zθ J C(t)
PDM
t1
t2
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration [sec]
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