BAT54T 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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BAT54T Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diodes
BAT54T/AT/CT/ST SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Fast Switching
z PN Junction Guard Ring for Transient and ESD Protection
BAT54T
BAT54AT
BAT54CT
BAT54ST
SOT-523
MARKING:
BA77
BA7$7
BA7&7
BA767
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
30
VRWM
Working Peak Reverse Voltage
VR(RMS)
RMS Reverse Voltage
21
IO
Average Rectified Output Current
0.2
IFSM
Non-repetitive Peak Forward Surge Current @ t=8.3ms
600
IFRM
Repetitive Peak Forward Surge Current @ t≤1s;δ≤0.5
300
PD
Power Dissipation
150
RΘJA
Thermal Resistance from Junction to Ambient
667
Tj
Junction Temperature
125
Tstg
Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
V
V
A
mA
mA
mW
℃/W
℃
℃
Parameter
Reverse voltage
Reverse current
Symbol
V(BR)
IR
Test conditions
IR=100μA
VR=25V
IF=1mA
Min Typ Max Unit
30
V
2
μA
0.32
Forward voltage
IF=10mA
VF
IF=30mA
0.4
V
0.5
Total capacitance
Reverse recovery time
IF=100mA
Ctot
VR=1V,f=1MHz
trr
IF= IR=10mA, Irr=0.1×IR, RL=100Ω
1
10
pF
5
ns
www.cj-elec.com
1
F,Oct,2015
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