SMP30(2004) 查看數據表（PDF） - STMicroelectronics
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SMP30 Datasheet PDF : 9 Pages
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Table 4: Thermal Resistances
Symbol
Parameter
Rth(j-a) Junction to ambient (with recommended footprint)
Rth(j-l) Junction to leads
Table 5: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IRM Leakage current
IPP Peak pulse current
IBO Breakover current
IH Holding current
VR Continuous reverse voltage
IR Leakage current at VR
C Capacitance
SMP30
Value
120
30
Unit
°C/W
°C/W
IRM @ VRM
IR @ VR
Types
max.
max.
note1
µA
V
µA
V
SMP30-62
56
62
SMP30-68
61
68
SMP30-100
90
100
SMP30-120
108
120
SMP30-130
SMP30-180
117
130
2
5
162
180
SMP30-200
180
200
SMP30-220
198
220
SMP30-240
216
240
SMP30-270
243
270
Note 1: IR measured at VR guarantee VBR min ≥ VR
Note 2: see functional test circuit 1
Note 3: see test circuit 2
Note 4: see functional holding current test circuit 3
Note 5: VR = 50V bias, VRMS=1V, F=1MHz
Note 6: VR = 2V bias, VRMS=1V, F=1MHz
Dynamic
VBO
max.
note 2
V
85
93
135
160
173
235
262
285
300
350
Static
VBO @ IBO
max. max.
note 3
V mA
82
90
133
160
173
800
240
267
293
320
360
IH
min.
note 4
mA
150
C
typ.
note 5
pF
20
20
16
16
14
12
12
10
10
10
C
typ.
note 6
pF
40
40
35
30
30
25
25
20
20
20
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