SMP30-62 查看數據表（PDF） - STMicroelectronics
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SMP30-62 Datasheet PDF : 9 Pages
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SMP30
Characteristics
Table 2. Absolute ratings (Tamb = 25 °C)
Symbol
Parameter
IPP
Repetitive peak pulse current
IFS
Fail-safe mode : maximum current(1)
ITSM
Non repetitive surge peak on-state current (sinusoidal)
I²t
I²t value for using
Tstg
Storage temperature range
Tj
Maximum junction temperature
TL
Maximum lead temperature for soldering during 10 s.
1. In fail safe mode, the device acts as a short circuit.
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
8/20 µs
t = 0.2 s
t=1s
t=2s
t = 15 mn
t = 16.6 ms
t = 20 ms
Table 3. Thermal resistances
Symbol
Parameter
Rth(j-a)
Rth(j-l)
Junction to ambient (with recommended footprint)
Junction to leads
Table 4.
Symbol
Electrical characteristics - definitions (Tamb = 25 °C)
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IRM Leakage current
IPP Peak pulse current
IBO Breakover current
IH Holding current
VR Continuous reverse voltage
IR Leakage current at VR
C Capacitance
Value
Unit
30
70
35
40
A
45
70
100
2.5
kA
14
10.5
A
9
3
5.7
A²s
4.9
-55 to + 150 °C
150
°C
260
°C
Value
120
30
Unit
°C/W
°C/W
Doc ID 5603 Rev 7
3/9
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