DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SMP30-62 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
SMP30-62
ST-Microelectronics
STMicroelectronics ST-Microelectronics
SMP30-62 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
SMP30
Table 5. Electrical characteristics - values (Tamb = 25 °C)
IRM @ VRM
IR (1) @ VR
Dynamic
VBO
Static
VBO @ IBO
IH
C(2)
C(3)
Types
max.
max.
max. max. max. min. typ. typ.
µA
V
µA
V
V
V
mA mA pF
pF
SMP30-62
SMP30-68
SMP30-100
SMP30-120
SMP30-130
SMP30-180
SMP30-200
SMP30-220
SMP30-240
SMP30-270
56
62
85
82
20
40
61
68
93
90
20
40
90
100
135
133
16
35
108
120
160
160
16
30
117
130
173
173
14
30
2
5
800 150
162
180
235
240
12
25
180
200
262
267
12
25
198
220
285
293
10
20
216
240
300
320
10
20
243
270
350
360
10
20
1. IR measured at VR guarantee VBR min VR
2. VR = 50 V bias, VRMS = 1 V, F = 1 MHz
3. VR = 2 V bias, VRMS = 1 V, F = 1 MHz
Figure 2. Pulse waveform
% I PP
10 0
50
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
Figure 3.
ITSM(A)
25
20
15
10
Non repetitive surge peak on-state
current versus overload duration
F=50Hz
0
tr
tp
5
t
0
1E-2
1E-1
t(s)
1E+0
1E+1
1E+2
1E+3
4/9
Doc ID 5603 Rev 7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]