BCP56 查看數據表（PDF） - STMicroelectronics

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BCP56

MEDIUM POWER AMPLIFIER

STMicroelectronics 

BCP55/56

MEDIUM POWER AMPLIFIER

s SILICON EPITAXIAL PLANAR NPN

TRANSISTORS

s MINIATURE PLASTIC PACKAGE FOR

APPLICATION IN SURFACE MOUNTING

CIRCUITS

s GENERAL PURPOSE MAINLY INTENDED

FOR USE IN MEDIUM POWER INDUSTRIAL

APPLICATION AND FOR AUDIO AMPLIFIER

OUTPUT STAGE

s PNP COMPLEMENTS ARE BCP52 AND

BCP53 RESPECTIVELY

ADVANCE DATA

2

3

2

1

SOT-223

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCBO

VCEO

VCER

VEBO

IC

ICM

IB

IBM

Ptot

Tstg

Tj

Collector-Base Voltage (IE = 0)

Collector-Emitter Voltage (IB = 0)

Collector-Emitter Voltage (RBE = 1KΩ)

Emitter-Base Voltage (IC = 0)

Collector Current

Collector Peak Current (tp < 5 ms)

Base Current

Base Peak Current (tp < ms)

Total Dissipation at Tc = 25 oC

Storage Temperature

Max. Operating Junction Temperature

October 1997

Value

BCP55

BCP56

60

100

60

80

60

100

5

1

1.5

0.1

0.2

2

-65 to 150

150

Unit

V

V

V

V

A

A

A

A

W

oC

oC

1/4

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